SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

Provided is a semiconductor light emitting element, which has a buffer layer formed on a semiconductor substrate as needed, a semiconductor layer formed by laminating an n-type or p-type lower semiconductor layer, a light emitting layer and a p-type or n-type upper semiconductor layer, and has high light emitting efficiency to a specific wavelength. Specifically, a semiconductor layer (30) is formed on a semiconductor substrate (10) directly or with a buffer layer (20) in between as needed. The semiconductor light emitting element does not require a reflection layer which is formed in conventional semiconductor light emitting elements, has a property of exhibiting a reflectance of 60% or more to a wavelength of 200-350nm, and permits the semiconductor substrate (10) to function as the reflection layer.