| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a light emitting diode of nitride gallium by flush treatment or other kinds. <P>SOLUTION: The method for manufacturing the light emitting diode includes a step that forms a shielding layer consisting of a hydrophilic resin material by covering and shielding all of P contacts 11 and N contacts 12 of a wafer, a step that packages the wafer with a macromolecular inorganic or organic compound 3 containing a yellow "or cerise and green is mixed" fluorescent powder, a step that exposes the P contact 11 and N contact 12 by removing the shielding layer of hydrophilic resin material through a washing process, and a step that forms into a light emitting diode emitting white light through shredding and welding of gold line 4. Since the P contact 11 and N contact 12 are exposed through the washing process, exhaust heat property is good, a service life still becomes longer, the gold line is not disconnected, and the occurrence of halation is also prevented. <P>COPYRIGHT: (C)2009,JPO&INPIT |
