| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device with an excellent photoelectric converting characteristic by effectively utilizing silicon semiconductor material, because it is difficult to manufacture a quantity of photoelectric conversion devices enough to meet demand by effectively utilizing limited materials. <P>SOLUTION: The photoelectric conversion device comprises: a first unit cell 104 including a single-crystal semiconductor layer 106 wherein a first electrode 103 and one conductive type first impurity semiconductor layer 107 are provided on one surface thereof and a reverse conductive type second impurity semiconductor layer 108 to the one conductive type is provided on the other surface thereof; and a second unit cell 105 including a non-single-crystal semiconductor layer wherein a one conductive type third impurity semiconductor layer is provided on one surface thereof and a reverse conductive type fourth purity semiconductor layer to the one conductive type and a second electrode are provided on the other surface thereof. The first and second unit cells are connected in series with an intermediate layer in between, and the intermediate layer includes a transition metal oxide. An insulation layer is provided on the surface of the opposite side of the single-crystal semiconductor layer of the first electrode, and the insulation layer and a supporting substrate are joined. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
