| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturable inexpensively while having a low on-resistance and a high withstand voltage. SOLUTION: This semiconductor device includes an N-type well region 2 formed on a P-type semiconductor substrate 1, a P-type body region 3 formed within the well region 2, an N-type source region 6 formed within the body region 3, an N-type drain region 8 formed with a distance from the body region 3 within the well region 2, a gate insulating film 12 formed in a region including a part of the upper layer of the body region 3, a gate electrode 9 formed in the upper layer of the gate insulating film 12, and a P-type embedded diffusion region 4 making contact with the bottom of the body region 3 and extending to the lower region of the drain region 8 in a direction parallel to the surface of the semiconductor 1 within the well region 2. COPYRIGHT: (C)2009,JPO&INPIT
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