| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum dot type infrared detector capable of having high sensitivity without increasing a dark current nor noise. SOLUTION: On an intermediate layer 10, quantum dots 21 and an intermediate layer 11 covering them are formed. The intermediate layer 11 has a thickness of, for example, 30 nm such that strain is left not arraying more than a half of the quantum dots 21 in a longitudinal direction. Four combinations of quantum dots 21 and intermediate layers 11 are stacked. Further, quantum dots 21 and an intermediate layer 12 covering them are further formed thereupon. The intermediate layer 12 has a thickness of, for example, 60 nm removing strain due to the quantum dots 21 on the surface thereof. Only one combination of the quantum dots 21 and intermediate layer 12 is provided and combined with five combinations under it to constitute one repetition unit. Then 20 repetition units in total are provided. Consequently, 120 layers of quantum dots 21 in total are provided. COPYRIGHT: (C)2009,JPO&INPIT
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