| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor crystal by which a high quality semiconductor crystal can be obtained with good reproducibility, and to provide a semiconductor crystal in which the dislocation density is uniform. SOLUTION: In a furnace 1 for growing the semiconductor crystal by a VGF (vertical gradient freeze) method, a melt 34 accommodated in a crucible 20 is heated from the side face side and the opening part side of the crucible in a state where the melt 34 is brought into contact with a seed crystal 30 provided at one end of the crucible 20, whereby at least during crystal growth, the heating temperature on the opening part side is held to be higher than the heating temperature on the side face side, so that the temperature at one end of the crucible 20 on the seed crystal 30 side is held lower than the temperature at the other end of the crucible 20 (the opening part side of the crucible 20). Under such conditions, a single crystal of a compound semiconductor crystal is grown by gradually solidifying the melt 34 from the seed crystal 30 side toward the other end of the crucible 20 by lowering the temperature of the melt 34. COPYRIGHT: (C)2009,JPO&INPIT
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