| 摘要 |
A semiconductor wafer to be treated is placed in a horizontal position on a holding plate held by a susceptor. Six bumps are mounted upright on the upper surface of the holding plate. The semiconductor wafer is supported by the six bumps in point contacting relationship, and is held at a distance ranging from 0.5 mm to 3 mm from the upper surface of the holding plate. Light is directed from halogen lamps onto the semiconductor wafer held by the holding plate to preheat the substrate until the temperature of the semiconductor wafer is increased up to a predetermined temperature. Thereafter, flash light is directed from flash lamps onto the semiconductor wafer. A thin gas layer lying between the back surface of the semiconductor wafer and the upper surface of the holding plate acts as a resistance to suppress the motion of the semiconductor wafer, thereby preventing a crack in the semiconductor wafer.
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