| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputter target manufacturing method by which a wiring film of low resistance preventing the occurrence of hillocks, etching residues, and electrochemical reaction with ITO or the like is deposited with excellent reproducibility, and generation of dust during the sputtering is suppressed. <P>SOLUTION: When manufacturing an ingot or a sintered body having the composition consisting of 0.001 to 30 atomic% of at least one kind of a first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B with the balance comprising substantially Al by the atmosphere melting method, the vacuum melting method, the rapid solidification process, and the powder metallurgy process, C is incorporated into the ingot or sintered body in the range of 20 atomic ppm to 37.8 atomic% to the content of the first element. The obtained ingot or sintered body is worked to manufacture the sputter target. <P>COPYRIGHT: (C)2009,JPO&INPIT |
