| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a group III-V compound semiconductor crystal, which is good in the reproducibility of carbon concentration in the semiconductor crystal, easily enables generation of a high-concentration carbon oxide gas, and necessitates no supply of carbon monoxide gas from the outside of a furnace. SOLUTION: In this method, a GaAs raw material 4 and boron oxide 5 are filled in a crucible 1, and a solid carbon 6 is arranged to react with a gaseous substance resulting from the boron oxide 5 vaporized in the crucible 1. After the GaAs raw material 4 is melted by heating and then the molten raw material 4 is solidified to form a GaAs single crystal to which carbon has been added. Carbon is previously added to the GaAs raw material 4 before being filled in the crucible 1. COPYRIGHT: (C)2009,JPO&INPIT
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