| 摘要 |
Protecting a FET from plasma damage during FEOL processing by forming a FET-like structure in conjunction with and adjacent to an FET, in a same well as the FET, but having a body doped opposite to the well polarity. The FET-like structure is formed with thinner oxide than the gate oxide of the FET, has a gate structure (poly) connected with the gate of the FET, and may be shorted out by the first metal layer (M1).
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