| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer for chemical vapor deposition and a method for manufacturing the same. SOLUTION: The wafer is mounted on a pocket of a susceptor provided in a reaction chamber in a high-temperature atmosphere into which a reaction gas is supplied, and includes at least one or more metal organic materials to be evaporated on an evaporation surface. A separating portion inclining to gradually increase a predetermined gap between the wafer and the bottom surface of the pocket from an outer edge contacting the bottom surface of the pocket toward the center of a wafer body is provided on the bottom surface of the wafer body mounted on the pocket. With this configuration, the entire area is uniformly heated and a growing layer is uniformly evaporated on the evaporation surface, irrespective of bending deformation caused by the difference in a lattice constant and a thermal expansion ratio, and breakage due to stress concentration is prevented. COPYRIGHT: (C)2009,JPO&INPIT
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