| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device using a tungsten film for its gate, source, or drain electrode, which can reduce an nMOS-pMOS resistance difference. SOLUTION: The method of manufacturing a semiconductor device comprises the steps of: forming nMOS and pMOS containing gate electrodes (14a, 14b) and source/drain diffusion layers (16a, 16b) on a silicon substrate 10; forming a tungsten film 17 selectively on the gate electrodes (14a, 14b) and the source/drain diffusion layers (16a, 16b); forming insulating films (etching stopping silicon oxide film 18 and silicon nitride film 19) to cover the tungsten film 17; removing the insulating film of the pMOS region 12b; and forming a tungsten film 20 selectively on the tungsten film 17 of the pMOS region 12b. COPYRIGHT: (C)2009,JPO&INPIT
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