| 摘要 |
PROBLEM TO BE SOLVED: To prevent short-circuiting between a second n-type region n2 and a second p-type region p2 of a thyristor even when a metal silicide layer is formed on a surface of the second n-type region n2. SOLUTION: A semiconductor device 1 includes the thyristor T1 in which a first p-type region p1 (first region), a first n-type region n1 (second region), the second p-type region p2 (third region), and the second n-type region n2 (fourth region) are sequentially arranged to form junctions. The second p-type region p2 is formed on a semiconductor substrate 11 separated by an element isolation region 13. A gate electrode 22 is formed on the second p-type region p2 via a gate insulating film 21, and sidewalls 23 and 24 are formed at both wall sides of the gate electrode 22. The second n-type region n2 is formed so that one end thereof covers the joint portion between the other end of the second p-type region p2 and the element isolation regions 13 (13-1), and so that the other end thereof is joined with the sidewall 23 on the other side. COPYRIGHT: (C)2009,JPO&INPIT
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