| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the following problems: since a silicon nitride film formed by a low-pressure CVD method, which is generally used as a passivation film in a semiconductor device, has about 10% film thickness variation, when the film is used for a reflective liquid crystal panel, the panel has disadvantages such as great changes in the reflectance and changes in the refractive index of the liquid crystal due to the film thickness variation of the passivation film. <P>SOLUTION: In a liquid crystal panel substrate in which a matrix of reflective electrodes (14) is formed on a substrate (1) and a transistor is formed according to each reflective electrode and a voltage is applied to the reflective electrode through the transistor, a silicon oxide film having a thickness of 500 to 2,000 Å is used as the passivation film (17) and the thickness is set to a value in response to the wavelength of the incident light. <P>COPYRIGHT: (C)2009,JPO&INPIT |
