| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing a photoelectric converting element, which efficiently forms a film with microwave plasma at a high speed, inhibits mixing of oxygen, and reduces the number of faults, and also to provide the photoelectric converting element. <P>SOLUTION: The photoelectric converting element manufacturing apparatus 100 forms the laminated film of a semiconductor on a wafer W by a microwave plasma CVD method. The apparatus is provided with: a chamber 10 being a sealed space incorporating a base on which the objective wafer W where the thin film is to be formed is placed; a first gas supply part 40 supplying plasma excitation gas to a plasma excitation region in the chamber 10; a pressure adjusting part 70 adjusting pressure in the chamber 10; a second gas supply part 50 supplying material gas to a plasma diffusion region in the chamber 10; a microwave applying part 20 introducing a microwave into the chamber 10; and a bias voltage applying part 60 selecting wafer bias voltage in accordance with a gas type and applying it to the wafer W. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
