| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus of a copper thin film capable of depositing the copper thin film having the high film deposition rate, the excellent film quality in which any impurities hardly remain, and the targeted film thickness by using inexpensive chlorine or hydrogen chloride as raw material gas. SOLUTION: The vapor phase growth apparatus of the copper thin film comprises a reaction vessel in which a substrate to be processed and a copper sheet are arranged, a raw material gas feed pipe for feeding raw material gas to be selected among chlorine or hydrogen chloride, a plasma generating means for generating plasma of the raw material gas, and an atomic reducing gas generating means for generating atomic reducing gas at least in a vicinity of the substrate to be processed in the reaction vessel. The raw material gas feed pipe and the plasma generating means are arranged so that the raw material gas activated with plasma is reacted with the copper sheet in the reaction vessel. COPYRIGHT: (C)2009,JPO&INPIT
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