发明名称 |
CD BIAS LOADING CONTROL WITH ARC LAYER OPEN |
摘要 |
<p>A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.</p> |
申请公布号 |
WO2009085597(A2) |
申请公布日期 |
2009.07.09 |
申请号 |
WO2008US86094 |
申请日期 |
2008.12.09 |
申请人 |
LAM RESEARCH CORPORATION;CHI, KYEONG-KOO;KIM, JONATHAN |
发明人 |
CHI, KYEONG-KOO;KIM, JONATHAN |
分类号 |
H01L21/027;H01L21/30 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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