发明名称 |
APPARATUS AND METHOD FOR IMPROVED LEAKAGE CURRENT OF SILICON ON INSULATOR TRANSISTORS USING A FORWARD BIASED DIODE |
摘要 |
Use of a forward biased diode to reduce leakage current of transistors implemented on silicon on insulator (SOI) is a particular challenge due to the difficulty of achieving effective contact with the region beneath the gate of the transistor. An improved implementation in SOI gate fingers that reach under the source through tunnels that are contacted with a region outside the transistor. A further embodiment uses drain extension implants to provide good channel connection.
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申请公布号 |
US2009174464(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
US20090348797 |
申请日期 |
2009.01.05 |
申请人 |
KAPOOR ASHOK KUMAR;STRAIN ROBERT |
发明人 |
KAPOOR ASHOK KUMAR;STRAIN ROBERT |
分类号 |
H03K3/01;H01L21/336;H01L21/8238;H01L27/12 |
主分类号 |
H03K3/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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