发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of preventing distortion or loss of a photoresist pattern used as an etching barrier in a process of etching an organic bottom anti-reflective coating. <P>SOLUTION: The method of manufacturing a semiconductor device includes a step of forming an organic bottom anti-reflective coating over an etch target layer, a step of forming a photoresist pattern over the organic bottom anti-reflective coating, and a step of etching the organic bottom anti-reflective coating using a sulfur-containing gas. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009152586(A) 申请公布日期 2009.07.09
申请号 JP20080313246 申请日期 2008.12.09
申请人 HYNIX SEMICONDUCTOR INC 发明人 JUNG TAE-WOO
分类号 H01L21/3065 主分类号 H01L21/3065
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