发明名称 |
PROCESS FOR TRANSFERRING FILM |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process which prevents defects on a surface of an epitaxial grown layer from being brought to substrates stuck to each other. <P>SOLUTION: The process of transferring a layer of a first material from a first substrate 4 having defects in a zone close to the surface, onto a host substrate 20 made of a second material includes: (a) a step of thinning the first substrate in order to form a first thinned substrate 24; (b) a step of implanting ion or atom in the first substrate in order to form an implantation plane 6 therein and delimiting the layer to be transferred; and (c) a step of transferring the layer onto the host substrate 20 by fracturing the substrate along the implantation plane. This process allows production of substrates stuck to each other without defects. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2009152579(A) |
申请公布日期 |
2009.07.09 |
申请号 |
JP20080303278 |
申请日期 |
2008.11.28 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
MORICEAU HUBERT;COUCHAUD MAURICE;DESCHANVRES JEAN-LUC;JOUDRIER ANNE-LAURE |
分类号 |
H01L21/20;H01L21/265 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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