发明名称 PROCESS FOR TRANSFERRING FILM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a process which prevents defects on a surface of an epitaxial grown layer from being brought to substrates stuck to each other. <P>SOLUTION: The process of transferring a layer of a first material from a first substrate 4 having defects in a zone close to the surface, onto a host substrate 20 made of a second material includes: (a) a step of thinning the first substrate in order to form a first thinned substrate 24; (b) a step of implanting ion or atom in the first substrate in order to form an implantation plane 6 therein and delimiting the layer to be transferred; and (c) a step of transferring the layer onto the host substrate 20 by fracturing the substrate along the implantation plane. This process allows production of substrates stuck to each other without defects. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009152579(A) 申请公布日期 2009.07.09
申请号 JP20080303278 申请日期 2008.11.28
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 MORICEAU HUBERT;COUCHAUD MAURICE;DESCHANVRES JEAN-LUC;JOUDRIER ANNE-LAURE
分类号 H01L21/20;H01L21/265 主分类号 H01L21/20
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