| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, which increase a transmission efficiency of drive voltage of each transistor in a transistor array in which channels are formed in a vertical direction. SOLUTION: The semiconductor device includes a plurality of column patterns, a gate insulating film surrounding each of the column patterns, and a conductive film surrounding each of the gate insulating films and connecting the adjacent ones of the gate insulating films, and the conductive film functions as a gate electrode and a wiring. COPYRIGHT: (C)2009,JPO&INPIT
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