| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a structure exerting excellent characteristics. SOLUTION: The semiconductor device comprises: an element region 12 having a polygonal shape defined by a plurality of sides 21 to 24; a substrate 10 including an element isolating region 13 surrounding the element region; and a plurality of gate electrodes 31 provided on the substrate, crossing the element region, arranged in parallel with each other, and electrically connected each other. At least one side is not parallel to the gate electrodes without crossing any gate electrodes. COPYRIGHT: (C)2009,JPO&INPIT
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