| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device which has suppressed variation in gain due to variation in wavelength of light. SOLUTION: The optical semiconductor device has a lower clad layer 3 formed on a substrate 1, an active layer 2 having a multi-quantum well structure composed of a quantum well layer and a barrier layer formed on the lower clad layer 3, and an upper clad layer 4 formed on the active layer 2, and the multi-quantum well structure is characterized in that at least one quantum well layer having a different well width from other quantum well layer, thereby widening the width of a gain spectrum of the quantum well structure. COPYRIGHT: (C)2009,JPO&INPIT
|
