| 摘要 |
The invention relates to a semiconductor device (10) with a substrate (12) and a semiconductor body (11) of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region (1,2,3) first conductivity type, a second conductivity type opposite to said first conductivity type and the first conductivity type, respectively, with a first semiconductor region (3) comprising the collector region or the emitter region being formed in the semiconductor body (11), on top of which a second semiconductor region (2) comprising the base region is present, on top of which a third semiconductor region (1) comprising the other of said collector region and said emitter region is present, said semiconductor body (11) being provided with a constriction at the location of the transition between the first and the second semiconductor region (3, 2), which constriction has been formed by means of an electrically insulating region (26, 27) buried in the semiconductor body (11). According to the invention a part of the semiconductor body that is formed above the buried electrically insulating region (26,27) is monocrystalline. This enables a strong lateral miniaturization of the device and results in excellent high frequency properties of the transistor. Such a device (10) is possible thanks to its manufacture with a method of manufacturing according to the invention.
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