发明名称 |
SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SUCH TRANSISTOR |
摘要 |
This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-type by ion implantation. This built-in Schottky diode region has built therein a Schottky diode of low on-resistance that is formed of a second deficient pan disposed in a high-density gate layer, a second n-type base layer penetrating a low-density p-type deposit layer formed thereon, reaching an n-type drift layer of the second deficient part and attaining its own formation in consequence of inversion of the p-type deposit layer into an n-type by the ion implantation of an n-type impurity from the surface, and a source electrode connected in the manner of forming a Schottky barrier to the surface-exposed part of the second n-type base layer.
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申请公布号 |
US2009173949(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
US20060281391 |
申请日期 |
2006.12.27 |
申请人 |
NATIONAL INSTITUTE OF ADV. INDUSTRIAL SCI. & TECH. |
发明人 |
YATSUO TSUTOMU;HARADA SHINSUKE;FUKUDA KENJI;OKAMOTO MITSUO |
分类号 |
H01L29/24;H01L21/336 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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