发明名称 |
MEMORY CELL SUITABLE FOR DRAM MEMORY |
摘要 |
The present invention relates to a memory cell with a memory capacitor (110) on an active semiconductor region (104), the memory capacitor having a first capacitor- electrode layer, which, in a cross-sectional view of the memory cell, has first and second electrode-layer sections that extend on the active semiconductor region in parallel to the surface of the active semiconductor region at a vertical distance to each other and that are electrically connected by a third electrode-layer section extending vertically, that is, perpendicular to the surface of the active semiconductor region. A control transistor (112) is connected with a conductive second capacitor electrode layer that extends between the first and second electrode-layer sections and is electrically isolated from them by an isolation layer (116). Achieved advantages comprise a high manufacturing yield can, reduced fabrication cost and reduced risk of junction leakage by a small area required for the memory cell. |
申请公布号 |
WO2009083882(A2) |
申请公布日期 |
2009.07.09 |
申请号 |
WO2008IB55414 |
申请日期 |
2008.12.18 |
申请人 |
NXP B.V.;PUGET, SOPHIE;MAZOYER, PASCALE, L., A. |
发明人 |
PUGET, SOPHIE;MAZOYER, PASCALE, L., A. |
分类号 |
H01L21/8242;H01L21/02;H01L27/02;H01L27/07;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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