发明名称 FORMATION OF A HYBRID INTEGRATED CIRCUIT DEVICE
摘要 Formation of a hybrid integrated circuit device (400) is described. A design for the integrated circuit (100) is obtained and separated into at least two portions responsive to component sizes. A first die (200) is formed for a first portion of the hybrid integrated circuit device (400) using at least in part a first minimum dimension lithography. A second die (300) is formed for a second portion of the device using at least in part a second minimum dimension lithography, where the second die (300) has the second minimum dimension lithography as a smallest lithography used for the forming of the second die (300). The first die (200) and the second die (300) are attached to one another via coupling interconnects respectively thereof to provide the hybrid integrated circuit device (400).
申请公布号 WO2009085374(A2) 申请公布日期 2009.07.09
申请号 WO2008US80652 申请日期 2008.10.21
申请人 XILINX, INC. 发明人 KARP, JAMES;YOUNG, STEVEN P.;NEW, BERNARD J.;NANCE, SCOTT S.;CROTTY, PATRICK J.
分类号 G06F17/50;H01L21/58;H01L23/48;H03K19/177 主分类号 G06F17/50
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