| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal polishing solution which is capable of quickly polishing tantalum, tantalum alloys, tantalum nitrides, and other tantalum compounds used as a barrier layer of copper or a copper alloy and has a low abrasive concentration to be free of polishing flaws and is capable of forming a buried metal film pattern of less thinning and high reliability, and to provide a polishing method using the same. <P>SOLUTION: The metal polishing solution includes abrasive grains, a conductor oxidizing agent, a protective film forming agent for a metal surface, an acid, and water, wherein the concentration of the abrasive grains is 0.05 to 3.0 wt.% and the metal polishing solution has a pH of ≤3 and the concentration of the conductor oxidizing agent is 0.01 to 3 wt.%. In the polishing method of polishing a target surface to be polished by supplying the metal polishing solution to a polishing pad on a platen to bring the metal polishing solution into contact with the target surface and relatively moving the target surface and the polishing pad, the barrier layer containing tantalum, tantalum nitrides, tantalum alloys, and other tantalum compounds is polished using the metal polishing solution. <P>COPYRIGHT: (C)2009,JPO&INPIT |
