DRIVING METHOD OF NANO GAP SWITCHING DEVICE, AND STORAGE DEVICE EQUIPPED WITH NANO GAP SWITCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a driving method for a nano gap switching device that shifts from a high resistive state to a low resistive state at high probability and a storage device that shifts the nano gap switching device from a high resistive state to a low resistive state by the driving method.

SOLUTION: The nano gap switching device includes an inter-electrode gap portion with a gap in the order of nanometer where a switching phenomenon occurs by impressing a predetermined voltage between a first electrode and a second electrode, impresses a voltage pulse of a first voltage value to shift from a predetermined low resistance state to a predetermined high resistance state, and impresses a voltage pulse of a second voltage value lower than the first voltage value to shift from a high resistance state to a low resistance state, wherein when shifting from the high resistance state to the low resistance state, the switching device is structured such that it impresses a voltage pulse of an intermediate voltage value between the first voltage value and the second voltage value prior to impressing the voltage value of the second voltage value.

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