| 摘要 |
A semiconductor device, comprising: a substrate; a floating body region formed in the substrate, a gate electrode formed above a first surface region of the floating body region via a gate insulating film, the gate electrode being connected to a word line; and source and drain regions, respectively, formed on second and third surface regions of the floating body region, the source region being connected to a source line and providing a first electric capacity at an interface relative to the floating body region, the drain region being connected to a bit line and providing a second electric capacity at an interface relative to the floating body region, the second electric capacity being smaller than the first electric capacity.
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