| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix organic light emitting device display preventing light emitting unevenness of a stripe shape and lowering of production yield, caused by electric current driving or the like, by forming a driving thin film transistor for an organic light emitting device by a standard laser technology. SOLUTION: Poly-silicon layers 34 and 36 of an active portion of a non-driving thin film transistor (including an outside electric circuit thin film transistor and a switch thin film transistor) of an organic light emitting device are formed by using a standard laser crystallization method. A poly-silicon layer 52 of an active portion of a driving thin film transistor for an organic light emitting device is formed by using a non-laser crystallization method or a low energy laser crystallization method. Therefore, the outside electric circuit thin film transistor and the switch thin film transistor have excellent electrical performance. For example, a high carrier mobility is obtained. Since the driving thin film transistor has good stability so that the resultant display obtains improved luminance uniformity. COPYRIGHT: (C)2009,JPO&INPIT |
