GALLIUM NITRIDE SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GALLIUM NITRIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a GaN substrate with a large diameter of two inches or more, which allows a semiconductor device such as a light-emitting element with improved characteristics such as luminance efficiency and operating life to be obtained at low cost industrially; a substrate with an epitaxial layer, which has an epitaxial layer formed on the main surface of the GaN substrate; a semiconductor device; and to provide a method of manufacturing the GaN substrate. SOLUTION: A GaN substrate 1 has a main surface, and includes a low-defect crystal region 52 and a defect-concentrated region 51 adjacent to the low-defect crystal region 52. The low-defect crystal region 52 and the defect-concentrated region 51 extend from the main surface to a backside located on the opposite side of the main surface. A plane direction [0001] is tilted in an off-angle direction with respect to a normal vector of the main surface. COPYRIGHT: (C)2009,JPO&INPIT