| 摘要 |
A method of manufacturing a resistive divider circuit, comprising providing a silicon body (6) having a plurality of opposing pairs of intermediate taps extending therefrom. Each tap comprises a thin silicon stem (61) supporting a relatively wider silicon platform (62). A silicidation protection (SIPROT) layer (S) is deposited over the body (6) and intermediate taps and then patterned to expose the platform (62). A silicidation process is performed to silicidate the platform to form a contact pad of relatively low resistivity.
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