SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, AND ELECTRONIC DEVICE

摘要

A high-quality GaAs crystal thin film is obtained by using a low-cost Si substrate having excellent heat dissipation characteristics. Specifically disclosed is a semiconductor substrate comprising an Si substrate, an inhibition layer formed on the substrate and inhibiting crystal growth, in which inhibition layer there are a covering region covering a part of the substrate and an opening region formed within the covering region and not covering the substrate, a Ge layer crystal-grwon in the opening region, a buffer layer crystal-grown on the Ge layer and composed of a P-containing group 3-5 compound semiconductor layer, and a functional layer crystal-grown on the buffer layer. In the semiconductor substrate, the Ge layer may be formed by annealing which is performed at such a temperature for such a time that crystal defects can move.