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发明名称
Einrichtung für das Plasmaätzen von Halbleiterwafern und/oder Bildung von dielektrischen Filmen darauf
摘要
申请公布号
DE212007000081(U1)
申请公布日期
2009.07.09
申请号
DE200721000081U
申请日期
2007.02.22
申请人
"NAUCHNOE I TEKHNOLOGICHESKOE OBORUDOVANIE" LIMITED
发明人
分类号
H01L21/3065
主分类号
H01L21/3065
代理机构
代理人
主权项
地址
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