| 摘要 |
PROBLEM TO BE SOLVED: To reduce variation in transistor characteristics of a semiconductor device having gate electrodes disposed in plurality of columns. SOLUTION: The semiconductor device 100 has the gate electrodes 10 disposed in plurality of columns, respectively, over a semiconductor substrate 70 in such a way as to be lined up along the direction of a gate length, and a gate connection portion 30 provided in the same layer where the respective gate electrodes 10 in the plurality of columns are placed, for electrically connecting the gate electrodes with each other. The gate connection portion 30 includes a protrusion 32 protruding outward in the direction of the gate length from the gate electrode 10b positioned at the outermost ends of the gate electrodes 10 disposed in the plurality of columns, respectively. COPYRIGHT: (C)2009,JPO&INPIT
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