| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable nitride semiconductor laser that reduces stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. SOLUTION: A method of manufacturing a nitride semiconductor laser uses a nitride III-V compound semiconductor. The manufacturing method of the nitride semiconductor laser includes (a) a step of forming adherence layers 21 and 24 made from a nitride dielectric on a light-emitting side resonator's end face 20 and a light-reflection side resonator's end face 23 by using plasma consisting of nitrogen gas, and (b) a step of forming a low-reflection end face-coating film 22 and a high-reflection end face-coating film 25 made from a dielectric on the adherence layers 21 and 24. COPYRIGHT: (C)2009,JPO&INPIT
|
