| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device contributing to improvement of a hot carrier characteristic in a peripheral circuit part other than a memory cell part, and capable of suppressing decrease of a current value after elimination in eliminating electrons included in a charge storage nitride film of the memory cell part; and to provide a manufacturing method thereof. SOLUTION: This application is applied to this nonvolatile memory device composed by forming, at the same time, an information-storing memory cell part formed on a semiconductor layer, and a peripheral circuit part other than the memory cell part which is formed on the semiconductor layer. The memory cell part includes: a gate electrode formed on the semiconductor layer; and a charge storage layer formed on a notch extending into both sides of a lower end of the gate electrode, and formed of an insulation film. The peripheral circuit part has a structure without including a charge storage layer therein. COPYRIGHT: (C)2009,JPO&INPIT
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