CONTINUOUS MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND CHAMBER

摘要

PROBLEM TO BE SOLVED: To provide a continuous manufacturing method for a semiconductor device which stabilizes film characteristics immediately after chamber cleaning and provides desired device characteristics even without predeposition, and to provide a chamber for execution of the manufacturing method. SOLUTION: The continuous manufacturing method for the semiconductor device has a step of forming a thin silicon film by plasma CVD. According to this method, chamber cleaning is carried out using F2gas without stopping the device. The chamber is made as an aluminum material chamber having a structure such that no angle is formed at the corners of the inner walls of the chamber and each inner wall is made of an aluminum material or an anodized aluminum. COPYRIGHT: (C)2009,JPO&INPIT