METHOD AND SYSTEM FOR FORMING AT LEAST ONE DIELECTRIC LAYER

摘要

PROBLEM TO BE SOLVED: To provide a desired etched aspect ratio. SOLUTION: A method for forming a structure includes a step of forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer. COPYRIGHT: (C)2009,JPO&INPIT