发明名称 |
SEMICONDUCTOR SUBSTRATE TEMPERATURE DETERMINATION |
摘要 |
The invention provides a method and a device for determining the temperature of a semiconductor substrate. A resonance circuit (110) is provided on the semiconductor substrate and is formed by a junction capacitor (11) and an inductor (12). The substrate is placed on a holder and the with electromagnetic energy of an electromagnetic field (5) generated by a radiation device (200). A circuit (110) is determined by detecting an effect of the resonance circuit (110) on the irradiated temperature of the semiconductor substrate is determined as a function of the resonance frequency. The method and device according to the invention provide for a more accurate determination of the temperature of the semiconductor substrate due to an increased sensitivity to the temperature of the junction capacitor (11).
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申请公布号 |
US2009175313(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
US20070297271 |
申请日期 |
2007.04.19 |
申请人 |
NXP B.V. |
发明人 |
KORDIC SRDJAN;LUNENBORG MEINDERT M.;JACQUEMIN JEAN-PHILIPPE |
分类号 |
G01K11/22 |
主分类号 |
G01K11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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