FIELD EFFECT TRANSISTOR WITH GATE HAVING VARYING SHEET RESISTANCE

摘要

A field effect transistor (FET) comprising a gate structure that includes at least one gate having a varying sheet resistance in a direction between a source contact and a drain contact. In an illustrative embodiment, the FET can be configured to operate as a radio frequency switch. In this case, the FET can provide improved performance with respect to both the off-state capacitances and radio frequency isolations over similar FETs implemented with typical gates.