| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which a fine contact hole can be formed without impairing manufacture yield or reliability. <P>SOLUTION: The method of manufacturing the semiconductor device includes a step of forming a first nitride film 24, a first oxide film 26, and a second nitride film 28 in order on a semiconductor substrate 10; a step of forming a photoresist film 34 on the second nitride film; a step of forming an opening 36 in the photoresist film; a first etching step of etching the second nitride film 28 using the photoresist film as a mask to make the opening reach the first oxide film; a second etching step of etching the first oxide film using the second nitride film as a mask to make the opening reach the first nitride film; a third etching step of increasing the diameter d<SB>2</SB>of a bottom portion of the opening and etching the first nitride film until halfway; and a fourth etching step of further etching the first nitride film to form a contact hole 38 reaching the semiconductor substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
| 申请公布号 |
JP2009152438(A) |
申请公布日期 |
2009.07.09 |
| 申请号 |
JP20070329860 |
申请日期 |
2007.12.21 |
| 申请人 |
FUJITSU MICROELECTRONICS LTD |
发明人 |
TSUTSUMI MASANORI;OGURA HISANORI |
| 分类号 |
H01L21/768;H01L21/28;H01L21/3065 |
主分类号 |
H01L21/768 |
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