发明名称 |
LOGIC ELEMENT, AND INTEGRATED CIRCUIT OR FIELD PROGRAMMABLE GATE ARRAY |
摘要 |
A complementary logic element including first and second transistor elements. The first and second gate electrodes of the two transistor elements are electrically parallel to form a common gate. Both the coupling layers of the first and the second transistor element include a resistance switching material, a conductivity of which may be altered by causing an ion concentration to alter if an electrical voltage signal of an appropriate polarity is applied. The first and second transistor elements also include an ion conductor layer that is capable of accepting ions from the coupling layer and of releasing ions into the coupling layer. The coupling layers and ion conductor layers are such that the application of an electrical signal of a given polarity to the gate enhances the electrical conductivity of the first coupling layer and diminishes the electrical conductivity of the second, or vice versa.
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申请公布号 |
US2009174430(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
US20090350329 |
申请日期 |
2009.01.08 |
申请人 |
KARG SIEGFRIED FRIEDRICH;MEIJER GERHARD INGMAR |
发明人 |
KARG SIEGFRIED FRIEDRICH;MEIJER GERHARD INGMAR |
分类号 |
H03K19/177;H03K19/0944 |
主分类号 |
H03K19/177 |
代理机构 |
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代理人 |
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地址 |
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