发明名称 |
METHOD FOR FORMING SEMICONDUCTOR THIN FILM AND METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE |
摘要 |
<p>Provided is a method for forming a semiconductor thin film, by which the semiconductor thin film wherein mobility deterioration due to heat and characteristic deterioration due to the mobility deterioration can be suppressed and heat resistance is improved can be obtained by more simple steps. A solution wherein a plurality of kinds of organic materials, including an organic semiconductor material, are mixed is applied or printed on a substrate and a thin film is formed. Then, a plurality of kinds of the organic materials are phase-separated in a step of drying the thin film. Thus, a semiconductor thin film (1) having a lamination structure wherein an intermediate layer (b) composed of an organic insulating material is sandwiched between two semiconductor layers (a, a') is obtained.</p> |
申请公布号 |
WO2009084584(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
WO2008JP73592 |
申请日期 |
2008.12.25 |
申请人 |
SONY CORPORATION;OHE, TAKAHIRO;KIMIJIMA, MIKI |
发明人 |
OHE, TAKAHIRO;KIMIJIMA, MIKI |
分类号 |
H01L21/368;H01L21/336;H01L29/786;H01L51/05;H01L51/40 |
主分类号 |
H01L21/368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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