发明名称 |
Method of forming a high breakdown voltage diode |
摘要 |
A multiple layer overvoltage protection device is provided. The method begins by providing a substrate having a first impurity concentration of a first conductivity type to define a mid-region layer. A dopant of a second conductivity type is introduced into the substrate with a second impurity concentration less than the first impurity concentration. An upper base region having a second type of conductivity is formed on the upper surface of the mid-region layer. A lower base region layer having a second type of conductivity is formed on a lower surface of the mid-region layer. A first emitter region having a first type of conductivity is formed on a surface of the upper base region layer. A first metal contact is coupled to the upper base region layer and a second metal contact is coupled to the lower base region layer. |
申请公布号 |
EP2076926(A2) |
申请公布日期 |
2009.07.08 |
申请号 |
EP20070838194 |
申请日期 |
2007.09.14 |
申请人 |
VISHAY GENERAL SEMICONDUCTOR LLC |
发明人 |
KAO, LUNG-CHING;KUNG, PU-JU |
分类号 |
H01L29/87 |
主分类号 |
H01L29/87 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|