Process for making a structure having at least one precisely positioned zone of one or several semiconductor nanocrystals

摘要

The procedure consists of isolating at least one zone (12) of a silicon- or germanium-based semiconductor film (1), resting on a mono-layer or multi-layer electrically insulating support (2), with the aid of an electron beam (11) to define a de-wetted zone on the film. The film is then re-annealed at high temperature (650 - 1250 degrees C) in a neutral or reducing atmosphere so that the de-wetted zone shrinks and creates a zone with one or more nano-crystals.