METHOD OF FORMING ZNO THIN-FILM AND METHOD OF FORMING THIN-FILM TRANSISTOR USING THE SAME

摘要

A formation method of the oxidation zinc thin film and a method for forming the thin film transistor using the same are provided, which enable to cure the crystal defect caused by the oxygen vacancy according to the formation of the thin film. In the first step, the zinc precursor and oxygen gas are supplied and the oxidation zinc thin film(220) is formed on the substrate(200) in the nitrogen atmosphere. In the first step, the supply of the zinc precursor is blocked after the step of forming the oxidation zinc thin film, the oxygen gas is provided, and the crystal defect caused by the oxygen vacancy is healed. The first step and the second step are repetitively performed.