发明名称 COPPER OR LOW-ALLOY COPPER LAYER WITH INSERTED NITROGEN ATOMS AND RELATED PROCESSING METHOD
摘要 The invention relates to a copper layer or low-alloy copper layer having nitrogen atoms inserted to a thickness higher than or equal to 0.05 µm, for instance higher than or equal to 0.1 µm, even higher than or equal to 0.2 µm, or even higher than or equal to 0.5 µm. The invention also relates to a related method.
申请公布号 EP2076617(A2) 申请公布日期 2009.07.08
申请号 EP20070858555 申请日期 2007.10.11
申请人 QUERTECH INGENIERIE 发明人 BUSARDO, DENIS
分类号 C23C14/06;C23C14/48 主分类号 C23C14/06
代理机构 代理人
主权项
地址