| 摘要 |
In a pattern formation method, a resist film is formed on a substrate and a barrier film including a plasticizer is then formed on the resist film. Thereafter, with a liquid provided on the barrier film, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the barrier film. Subsequently, after the pattern exposure, the resist film is developed after removing the barrier film, so as to form a resist pattern in a good shape without producing residues.
|
